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Blaze

2D Device Simulator for Advanced Materials

Blaze simulates devices fabricated using advanced materials. It includes a library of binary, ternary and quaternary semiconductors. Blaze has built-in models for graded and abrupt heterojunctions, and simulates binary structures such as MESFETS, HEMT’s and HBT’s.

Features

• DC, AC and time-domain solutions for general nonplanar homojunction and heterojunction semiconductor device structures
• Heterojunctions may be abrupt or continuously varying
• Device structure may be specified by the user, or by the output of a process simulator such as ATHENA
• Boltzmann and Fermi-Dirac statistics with band gap narrowing. Interface to Quantum for quantum statistics
• Drift-diffusion and energy balance transport models with advanced mobility models
• Trap dynamics for DC, transient and AC
• Models for Shockley-Read-Hall, optical, and Auger recombination, impact ionization, band-to-band, and Ohmic and Schottky contacts
• Built-in materials library that contains parameters for more than sixty materials
• C-Interpreter interface allows user-defined, composition dependent, models and material parameters

Rev. 100108_07