Magnetic3D

3D Magnetic Device Simulator

The Magnetic3D module enables the ATLAS device simulator to incorporate the effects of an externally applied magnetic field on the device behaviour. The dynamics of the charge carrier motion is modified by the addition of the Lorentz force. This force is proportional to the vector product of the carrier velocity and the applied magnetic flux density vector. The Magnetic3D module allows the consequent changes to current flow and potential distributions to be calculated. It can be used to simulate a large range of magnetic field sensitive devices, such as magnetotransistors and Hall effect magnetic field sensors.

Features

• A uniform, constant, external magnetic field with any direction in space can be specified
• Drift-Diffusion equations are modified by the presence of the Lorentz force
• Hall voltages can be calculated
• Current deflection caused by magnetic field can be observed
• Magnetic field magnitude sensors can be simulated
• Magnetic field direction sensors can be simulated
• Effect of stray magnetic fields on device performance can be modeled

Rev. 120607_01