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Contributed by STMi Catania
Presentations
Advances in ion implantation modeling for doping of semiconductors
3.1 MB Backend Process Simulation including Plasma Etch 1.4 MB CMOS Latchup Simulation 1.1 MB Elite 2D Topography Advanced 2D deposition and etch simulator 2.2 MB Fast Monte-Carlo Simulation of Ion Implantation Binary collision approximation implementation within ATHENA 1.4 MB LOCOS modeling Modeling of Local Oxidation Processes 1.4 MB MC Depo/Etch 2D Monte Carlo deposition and etch simulator 1.1 MB MC Implant 1D/2D Monte Carlo Implantation Simulator Seamlessly integrated into ATHENA's SSuprem4 2.2 MB Modeling of implantation using analytical models 1.8 MB Optimization of photolithography process using simulation 1.4 MB Optolith 2D Lithography Simulator Advanced 2D optical lithography simulator 2.8 MB PLS Advanced Diffusion Model New advanced diffusion model for dopants in Silicon 1.5 MB Process Model Simulates Lithography, Plasma Etch Sophisticated treatments for a surprising range of semiconductor processes HTML Process simulation calibration 1.1 MB RTA simulation using <311> cluster models 1.4 MB SSuprem4 Process Simulation Software Advanced 2D Process Simulator 1.3 MB
ATHENAProcess Simulation FrameworkATHENA framework integrates several process simulation modules within a user-friendly environment provided by Silvaco TCAD interactive tools. ATHENA has evolved from a world-renowned Stanford University simulator SUPREM-IV, with many new capabilities developed in collaboration with dozens of academic and industrial partners. ATHENA provides a convenient platform for simulating processes used in semiconductor industry: ion implantation, diffusion, oxidation, physical etching and deposition, lithography, stress formation and silicidation. Key Features:
Typical 90nm CMOS Process Flow
ATHENA Framework Architecture
Rev. 101410_21 |
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